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| Ordering number : ENN7055A SGF31 N-Channel GaAs MESFET SGF31 For C to Ku-band Local Oscillator and Amplifier Features * * Package Dimensions unit : mm 2134A [SGF31] 0.5 1.9 0.95 0.95 0.4 4 3 0 to 0.1 1.5 2.5 * * Lower phase noise. The chip surface is covered with the highly reliable protection film. Super miniaturized plastic-mold package (CP4). Automatic surface mounting is available. 0.16 1 2 0.5 0.6 0.95 0.85 2.9 1 : Gate 2 : Source 3 : Drain 4 : Source SANYO : CP4 0.8 Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDS VGS ID PD Tj Tstg Conditions Ratings 6 --5 100 200 150 --55 to +150 Unit V V mA mW C C Electrical Characteristics at Ta=25C Parameter Gate-to-Source Leakage Current Saturated Drain Current Gate-to-Source Cutoff Voltage Forward Transfer Admittance Symbol IGSO IDSS VGS(off) yfs Conditions VGS=--5V VDS=3V, VGS=0 VDS=3V, ID=100A VDS=3V, ID=10mA Ratings min 30 --0.5 typ 50 --1.6 34 max --10 70 --2.7 Unit A mA V mS Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 11802 GI IM / 91001 GI IM No.7055-1/5 1.1 SGF31 S-Parameter SGF31 FREQUENCY MHz 3000.0000 4000.0000 5000.0000 6000.0000 7000.0000 8000.0000 9000.0000 10000.0000 11000.0000 12000.0000 13000.0000 14000.0000 15000.0000 16000.0000 MAG .671 .585 .552 .550 .573 .611 .656 .702 .747 .789 .827 .858 .883 .905 S11 ANG --120.6 --148.0 --173.3 163.0 141.4 122.0 104.6 88.9 74.5 61.1 48.4 35.8 23.4 11.5 MAG 2.964 2.559 2.276 2.044 1.850 1.686 1.541 1.408 1.284 1.167 1.058 .954 .848 .716 S21 ANG 81.8 61.8 43.0 24.7 6.8 --10.6 --27.6 --44.2 --60.3 --76.1 --91.6 -107.0 -122.3 -137.8 MAG .098 .104 .114 .131 .154 .178 .200 .220 .240 .260 .277 .289 .296 .299 S12 ANG 34.1 31.2 27.9 23.5 16.7 7.6 --2.5 --13.0 --23.7 --35.0 --47.0 --59.5 --72.0 --83.6 VDS=3V IDS=30mA S22 MAG .514 .441 .389 .342 .299 .261 .236 .235 .263 .316 .384 .457 .533 .625 ANG --39.1 --52.3 --66.5 --82.7 --102.3 --126.3 --155.4 172.0 140.4 113.3 90.7 71.4 54.1 37.8 SGF31 FREQUENCY MHz 3000.0000 4000.0000 5000.0000 6000.0000 7000.0000 8000.0000 9000.0000 10000.0000 11000.0000 12000.0000 13000.0000 14000.0000 15000.0000 16000.0000 GUmax dB 13.37 10.93 9.43 8.32 7.48 6.87 6.45 6.17 6.02 6.03 6.17 6.40 6.57 6.68 12.95 10.83 9.79 9.39 GAmax dB S21^2 dB 9.44 8.16 7.15 6.21 5.34 4.54 3.76 2.97 2.17 1.34 .49 --.41 --1.43 --2.90 S12^2 dB --20.21 --19.66 --18.87 --17.66 --16.27 --15.01 --13.99 --13.14 --12.39 --11.70 --11.14 --10.77 --10.58 --10.50 .81 1.02 1.13 1.12 1.05 .97 .88 .80 .73 .65 .57 .49 .43 .36 K Delay nsec .057 .054 .052 .051 .049 .048 .047 .046 .044 .044 .043 .043 .043 .043 Mason's U dB 20.258 18.447 17.436 17.386 18.673 23.592 VDS=3V IDS=30mA G1 G2 dB 2.60 1.82 1.58 1.56 1.73 2.03 2.44 2.95 3.54 4.22 4.99 5.79 6.55 7.43 dB 1.33 .94 .71 .54 .41 .31 .25 .25 .31 .46 .69 1.02 1.45 2.15 No.7055-2/5 SGF31 S-Parameter S11 50 25 120 100 3.0 0 9. VDS=3V IDS=30mA, START 3 GHz STOP 16 GHz S21 90 60 12. 0 150 .0 250 10 6.0 15 25 50 100 150 200 250 150 30 6.0 --180 9.0 12.0 0 10 5 15. 0 --10 3.0 --25 --50 --250 --200 --150 --100 Rmax=1 IT03175 --150 --30 --120 --90 S22 --60 R max=5 IT03176 S12 90 120 60 50 25 100 150 200 250 15.0 150 3.0 30 10 12 .0 50 6.0 --180 9.0 0.5 0 10 25 100 150 250 9.0 6.0 --10 --30 --150 .0 15 3.0 12. 0 --250 --200 --150 --100 R max=1 --25 --120 --90 --60 R max=0.5 IT03177 --50 IT03178 No.7055-3/5 SGF31 Oscillation Characteristics Measured by the Application JIG for SGF31 Equivalent Circuit of the Application JIG (Recommended bias condition is VD=5V, ID=35mA) VD 1000pF 10 Dielectric Resonator G Z0, B 51 D S GaAsMESFET OUTPUT 10 REF 20.0 dBm PEAK LOG 10 dB / ATTEN 30 dB MKR-TRK 10.678 GHz 10.8 dBm [hp] 3048A Carrier : 10.678GHz 0 --10 --20 --30 --40 VD=5V ID=34.0mA VD=5V ID=34.0mA at@ 1kHz --60.0 dBc / Hz MARKER 10.678 GHz 10.8 dBm --50 --60 --70 --80 --90 WA SB SC FS CORR --100 --110 --120 --130 --140 --150 100 RES BW 10 kHz VBW 10 kHz SPAN 1.000 MHz SWP 30 ms IT03173 2 3 5 7 1k 2 3 5 710k 2 3 5 7100k IT03174 [f] [dBc / Hz] VS f [Hz] No.7055-4/5 SGF31 Amplification Characteristics Measured by the DUT Pout VS Pin f=11GHz VDS=3V ID=30mA GLP=5.2dB P1dB=15.6dBm 18 15 G B (d LP )= 5.2 4. 2 Pout(dBm) 10 5 0 --5 0 5 10 15 IT03609 Pin(dBm) Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2002. Specifications and information herein are subject to change without notice. PS No.7055-5/5 |
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